isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 5.
0V(Max.
)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC≤90℃
TJ
Junction Temperature
5
A
25
W
130
℃
Tstg
Storage Temperature Range
-65...