isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage
: VCE(sat)= 0.
5V(Max)@IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
A
40
W
150
℃
Tstg
Storage Temperature Rang...