2SD1061

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4.0A ·Complement to Type 2SB825 ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general high ...