isc Silicon
NPN Darlington Power
Transistor
2SD1193
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= 7.
0A ·Low Saturation Voltage ·Complement to Type 2SB883 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage
regulator control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Peak
PC
Collector Power Dis...