2SD2065

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ...