isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complement to Type 2SB1259 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Driver for solenoid, motor and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1
A
30
W
150...