isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.
)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Complement to Type 2SB1383 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for driver of solenoid, motor and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=...