isc Silicon
NPN Power
Transistors
BDT31/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.
0A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C
·Complement to Type BDT32/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO L
PARAMETER
BDT31
VALUE 80
BDT 31A
100
VCBO Collector-Base Voltage
BDT 31B
120
BDT 31C
140
BDT31
40
VCEO
Collector-Emitter Voltage
BDT 31A
60
BDT 31B
80
BDT 31C
100
VEBO Emitter-Base Voltage
...