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BDX66B

Part Number BDX66B
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 23, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Mi...
Datasheet BDX66B





Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX66 -80 VCBO Collector-Base Voltage BDX66A BDX66B -100 -120 BDX66C -140 BDX66 -60 VCEO Collector-Emitter Voltage BDX66A BDX66B -80 -100 BDX66C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Conti...






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