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BDX62B

Comset Semiconductors
Part Number BDX62B
Manufacturer Comset Semiconductors
Description PNP SILICON DARLINGTONS
Published Dec 10, 2012
Detailed Description BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal...
Datasheet PDF File BDX62B PDF File

BDX62B
BDX62B

Overview
BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Value -60 -80 -100 -120 -60 -80 -100 -120 -5.
0 -8 -12 -0.
15 90 -55 to +200 Unit VCEO Collector-Emitter Voltage V www.
DataSheet.
net/ VCEV VEBO IC IB PT TJ TS Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature VBE=-1.
5 V V V A A W °C IC(RMS) ICM @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.
94 Unit °C/W 24/10/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ BDX62 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=-0.
1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C www.
DataSheet.
net/ Min -60 -80 -100 -120 - Typ - Max -0.
5 Unit VCEO(SUS) ICEO Collector Cutoff Current IEBO Emitter Cutoff Current BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 V mA -5.
0 -0.
2 -2 -0.
2 -2 mA BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C VCBO=-80 V ICBO Collector-Base Cutoff Current VCBO=-50 V TCASE=200°C VCBO=-100 V VCBO=-60 V TCASE=200°C VCBO=-120 V VCBO=-70 V TCASE=200° VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-3.
0 A IB=-12 mA -0.
2 -2 -0.
2 -2 - -2 V VF Forward Voltage (pulse method) IF=3 A - - -2.
5 V VBE Base-Emitter Voltage (*) IC=-3.
0 A VCE=-3V - - - V 24/10/2012 COMSET SEMICONDUCTORS 2|4 Datasheet pdf - http://www.
DataSheet4U...


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