isc Silicon
PNP Darlington Power
Transistor
BDX86/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C
·Complement to Type BDX85/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX86
-45
BDX86A
-60
VCBO
Collector-Base Voltage
BDX86B
-80
BDX86C -100
BDX86
-45
VCEO
Collector-Emitter Voltage
BDX86A
-60
BDX86B
-80
BDX86C -100
VEBO
Emitter-Base Voltage
-5
IC
Co...