isc Silicon
PNP Power
Transistors
DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.
5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching
regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BUX66
-200
VCBO
Collector-Base Voltage
V
BUX66A
-300
BUX66
-150
VCEO
Collector-Emitter Voltage
V
BUX66A
-250
VEBO
Emitter-Base Voltage
...