DatasheetsPDF.com

BUX63

Part Number	BUX63
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 325V(Min.) ·Fast S...
Datasheet	BUX63 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 325V(Min.
) ·Fast Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 70 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature...

Similar Datasheet

BUX10 HIGH POWER NPN SILICON TRANSISTOR - STMicroelectronics
BUX10 SILICON POWER TRANSISTOR - SavantIC
BUX10 Silicon NPN Transistor - NTE
BUX10 SILICON MULTI-EPITAXIAL NPN TRANSISTOR - Semelab
BUX10 NPN Transistor - INCHANGE
BUX10A Silicon NPN Power Transistor - Inchange Semiconductor
BUX10P Silicon NPN Power Transistor - Inchange Semiconductor
BUX10X NPN MULTI - EPITAXIAL POWER TRANSISTOR - Seme LAB
BUX11 SILICON POWER TRANSISTOR - SavantIC
BUX11 SILICON MULTI-EPITAXIAL NPN TRANSISTOR - Seme lab

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)