isc Silicon
NPN Power
Transistors
DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.
5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching
regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BUX67
200
BUX67A
300
VCBO
Collector-Base Voltage
V
BUX67B
350
BUX67C
400
BUX67
150
BUX67A
250
VCEO
Collector-Emitter Voltage
V
BUX67B
30...