isc Silicon
NPN Power
Transistor
BDX37
DESCRIPTION ·High Current Capability-IC= 5A(DC) ·DC Current Gain—
: hFE = 45-450(Min) @ IC= 0.
5 A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 75V(Min.
) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High-current switching in power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
75
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC≤ 75℃
...