isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= -100V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage
: VCE(sat) = -2.
0 V (Max) @ IC = -3.
0 A ·Complement to Type BDX53C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Peak
-12...