BDX77

BDX73 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W R.

BDX75 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Res.

BDX77 : ·With TO-220C package ·Low saturation voltage ·Complement to type BDX78 ·Wide area of safe operation APPLICATIONS ·For medium power switching and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 80 5 8 12 3 60 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal.

BDX77F : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Complement to Type BDX78F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 80 V 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak s 12 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 32 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACT.

BDX78 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD202, BD204, BDX78 BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORS Complementary BD201, BD203 and BDX77 Medium Power Switching and Amplifier Applications N LH BF C E 12 3 A OO K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (.

BDX78 : ·With TO-220C package ·Complement to type BDX77 APPLICATIONS ·Medium power switching ·Amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak tp=10ms Base current Total power dissipation Junction temperature Storage temperature Tmb=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -8 -12 -3 60 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE 70 UNIT K/W Sa.

BDX78 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Complement to Type BDX77 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak tp≤10ms -12 A ICSM Collector Current-Peak tp≤2ms -25 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Ts.

BDX78F : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Complement to Type BDX77F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -80 V -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak s -12 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 32 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL .