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BDX78

INCHANGE
Part Number BDX78
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 23, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Complement t...
Datasheet PDF File BDX78 PDF File

BDX78
BDX78

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Complement to Type BDX77 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak tp≤10ms -12 A ICSM Collector Current-Peak tp≤2ms -25 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W BDX78 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDX78 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.
3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.
6A VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.
6A VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V ICEO Collector Cutoff Current VCE= -30V; IB= 0 ICBO Collector Cutoff Current VCB= -40V;IE= 0; TJ= 150℃ IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -1A ; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.
3A ; VCE= -3V, ftest= 1.
0MHz Switching Times ton Turn-On Time toff Turn-Off Time IC= -2A; IB1= -IB2= -0.
2A MIN -80 -100 -5 30 7.
0 MAX -1.
0 -1.
5 -2.
0 -1.
5 -...


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