isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage-VCES= 1500V(Min.
) ·Collector Current- IC = 8.
0A ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8.
0
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
6
A
125
W
150
...