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BU508

INCHANGE
Part Number BU508
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power...
Datasheet PDF File BU508 PDF File

BU508
BU508


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
0 ℃/W BU508 isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU508 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 MIN TYP.
MAX UNI T 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.
5A; IB= 2.
0A 5.
0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.
5A; IB= 2.
0A VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB= 5.
0V ; IC= 0 1.
5 V 1.
0 2.
0 mA 10 mA hFE-1 DC Current Gain IC= 0.
1A ; VCE= 5V 6 30 hFE-2 DC Current Gain IC= 4.
5A ; VCE= 5V 2.
25 COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.
1MHz 125 pF fT Current-Gain—Bandwidth Product IC= 0.
1A; VCE= 5V; ftest= 1.
0MHz 7 MHz Switching times tstg Storage Time tf Fall Time IC= 4.
5A , IB1= 1.
8A; LB= 10μH 8.
0 μs 0.
5 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications...



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