isc Silicon
NPN Power
Transistor
BU1706A
DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency electronic lighting
ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCESM
Collector-Emitter Voltage VBE= 0
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
3
A
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
100
W
150
℃
Tstg
Storage Temp...