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BU1706A

NXP
Part Number BU1706A
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced ...
Datasheet PDF File BU1706A PDF File

BU1706A
BU1706A

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
1.
5 0.
25 MAX.
1750 850 5 8 100 1.
0 0.
6 UNIT V V A A W V A µs Tmb ≤ 25 ...


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