isc Silicon
NPN Power
Transistor
BUV46A
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.
) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3
A
70
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
...