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BUV41

Inchange Semiconductor
Part Number BUV41
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV41 DESCRIP...
Datasheet PDF File BUV41 PDF File

BUV41
BUV41

Overview
www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV41 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.
8V (Max.
) @IC= 3A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications.
Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.
5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current- Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 300 200 7 15 20 3 5 120 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.
46 UNIT ℃/W isc Website：www.
iscsemi.
cn Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BUV41 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.
2A; IB= 0; L= 25mH 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICER Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
15A B 0.
8 V Collector-Emitter Saturation Voltage IC= 6A ;IB= 0.
6A IC= 8A; IB= 1A B 0.
9 V Collector-Emitter Saturation Voltage 1.
2 V Base-Emitter Saturation Voltage IC= 6A ;IB= 0.
6A 1.
6 V Base-Emitter Saturation Voltage IC= 8A; IB= 1A B 1.
8 0.
5 2.
5 0.
5 2.
5 1.
0 V Collector Cutoff Current VCE= 300V;RBE= 10Ω VCE= 300V;RBE= 10Ω;TC=100℃ VCE= 300V;VBE= -1.
5V VCE= 300V;VBE= -1.
5V;TC=100℃ VEB= 5V; IC= 0 mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff Current mA Switching Times, Resistive Load μs μs μs tr ts tf Rise Time IC= 8A; IB1= 1A; VCC= 160V; RB2= 2.
5Ω; VBB= -5V, tp= 30μs 0.
5 Stora...


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