isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS ·Designed for linear power and switching
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
180
V
140
V
VEBO IC PC TJ Tstg
Emitter-Base Voltage
7
V
Collector Current-Continuous
10
A
Collector Power Dissipation@TC=100℃
71
W
Junction Temperature
150
℃
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETE...