| Part Number | MJ2500 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min... |
| Features |
rlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage ...
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| File Size | 202.18KB |
| Datasheet |
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MJ2500 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 MJ2501* NPN PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î.
MJ2500 : ·With TO-3 package www.datasheet4u.com ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ2500/2501 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ2500 VCBO Collector-base voltage MJ2501 MJ2500 VCEO Collector-emitter voltage MJ2501 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -10 -0.2 150 200 -55~200 V A A W Open emitter -80 -60 V CONDITI.
MJ2500 : PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings IE=0 http://www.DataSheet4U.net/ Value MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2.
MJ2500 : MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector-Emitter voltage Collector-Base voltage Emitter-Base voltage Collector-Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Case Symbol VCEO VCB VEB IC IB PD TJ, Tstg RӨJC MJ2500 MJ3000 .
MJ2500 : .
MJ2501 : te cThe MJ2501 is a Silicon Epitaxial-Base PNP le upower transistors in monolithic Darlington dconfiguration, mounted in Jedec TO-3 metal so rocase. It is intented for use in power linear and b Pswitching applications. ) - O leteThe complementary NPN type is the MJ3001. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM bsolete PPrroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS O teSymbol Parameter ObsoleVCBO Collector-base Voltage (IE = 0) R1 Typ. = 10 KΩ R2 Typ. = 150 Ω PNP NPN Value MJ2501 MJ3001 80 Unit V VCEO Collector-emitter Voltage (IB = 0) 80 V VEBO Emitter-base Voltage (IC = 0) 5V IC Collector Current 10 A IB Base Current 0.2 A Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage T.
MJ2501 : MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors. Pin 1. Base 2. Emitter Collector(Case) Dimensions A B C D E F G H I J K Minimum Maximum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.57 39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.16 Dimensions : Millimetres PNP NPN MJ2501 MJ3001 10 Ampere Darlington Power Transistors Complementary Silicon 80 Volts 150 Watts TO-3 Maximum Ratings Characteristic Collector-Emitter V.
MJ2501 : ·With TO-3 package www.datasheet4u.com ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ2500/2501 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ2500 VCBO Collector-base voltage MJ2501 MJ2500 VCEO Collector-emitter voltage MJ2501 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -10 -0.2 150 200 -55~200 V A A W Open emitter -80 -60 V CONDITI.
MJ2501 : PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings IE=0 http://www.DataSheet4U.net/ Value MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2.
MJ2501 : ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~.
MJ2501 : MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector-Emitter voltage Collector-Base voltage Emitter-Base voltage Collector-Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Case Symbol VCEO VCB VEB IC IB PD TJ, Tstg RӨJC MJ2500 MJ3000 .
MJ2501 : .