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MJ2500

Comset Semiconductors
Part Number MJ2500
Manufacturer Comset Semiconductors
Description (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS
Published Dec 11, 2012
Detailed Description PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transis...
Datasheet PDF File MJ2500 PDF File

MJ2500
MJ2500

Overview
PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case.
They are intented for use in power linear and switching applications.
The complementary NPN types are the MJ3000 and MJ3001 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings IE=0 http://www.
DataSheet4U.
net/ Value MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 -60 -80 -60 -80 -5.
0 -10 -0.
2 150 200 -65 to +200 Unit V V V A A W °C IB=0 IC=0 @ TC < 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.
17 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.
DataSheet4U.
net/ PNP MJ2500 – MJ2501 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100mA IB=0 VCE=-30 V IB=0 VCE=-40 V IB=0 VBE=-5.
0 V IC=0 VCB=-60 V RBE=1.
0 kΩ VCB=-80 V RBE=1.
0 kΩ VCB=-60 V RBE=1.
0 kΩ TC=150°C VCB=-80 V RBE=1.
0 kΩ TC=150°C IC=-5.
0 A IB=-20 mA IC=-10 A IB=-50 mA IC=-5.
0 A VCE=-3.
0V VCE=-3.
0 V IC=-5.
0 A http://www.
DataSheet4U.
net/ Min -60 -80 - Typ - Max -1.
0 Unit V MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 ICEO mA -1.
0 -5.
0 mA -2.
0 mA IEBO Emitter Cutoff Current ICER Collector-Emitter Leakage Current MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 1000 -2.
0 V -4.
0 -3 V - VCE(SAT) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) VBE hFE (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.
0% 29/10/2012 COMSET SEMICONDUCTORS 2|3 datasheet pdf - http://www.
DataShee...


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