isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC2570A
DESCRIPTION ·Low Noise and High Gain
NF = 1.
5 dB TYP.
Ga = 8 dB TYP.
@f = 1.
0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.
9 dB TYP.
Ga = 9 dB TYP.
@f = 1.
0 GHz, VCE = 10 V, IC = 15 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in low-noise amplifier of VHF ~ UHF
stages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
25
V
VCEO Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.
0
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Ju...