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2SC2570A

Part Number	2SC2570A
Manufacturer	Renesas
Description	NPN EPITAXIAL SILICON RF TRANSISTOR
Published	Apr 1, 2024
Detailed Description	DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICA...
Datasheet	2SC2570A PDF File

Overview

DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges.
FEATURES • Low noise and high gain : NF = 1.
5 dB TYP.
, Ga = 8 dB TYP.
@ VCE = 10 V, IC = 5 mA, f = 1 GHz • Wide dynamic range : NF = 1.
9 dB TYP.
, Ga = 9 dB TYP.
@ VCE = 10 V, IC = 15 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity 500 pcs (Non reel) 2.
5 kpcs/box (Box type) Supplying Form • 18 mm wide radial taping • Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity i...

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