| Part Number | 2SC3993 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
| Features |
Saturation Voltage IC= 6A; IB=1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=1.2A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
tstg
Storage Time
tf
...
|
| File Size | 188.05KB |
| Datasheet |
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2SC3990 : Ordering number:EN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3990] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Co.
2SC3990 : ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 35 A ICM Collector Current-Peak 50 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 .
2SC3991 : Ordering number:EN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3991] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, duty cycle≤10% Tc=25˚C 800 500 7 50 70 14 3.5 300 Junct.
2SC3991 : ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 800 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 300 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SC3991 ELECTRICA.
2SC3992 : Ordering number:EN2235D NPN Triple Diffused Planar Silicon Transistor 2SC3992 800V/12A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3992] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions PW≤300µs, duty cycle≤10% Tc=25˚C Parameter Symbol Co.
2SC3992 : ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3992 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon.
2SC3993 : Ordering number:EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3993] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions PW≤300µs, Duty cycle≤10% Tc=25˚C Parameter Symbol Co.
2SC3994 : Ordering number:EN2828 NPN Triple Diffused Planar Silicon Transistor 2SC3994 800V/25A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3994] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3P.
2SC3994 : ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 60 A 300 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3994 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon.
2SC3995 : Ordering number:EN2508B NPN Triple Diffused Planar Silicon Transistor 2SC3995 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3995] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL .
2SC3995 : ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Powe.
2SC3996 : Ordering number:EN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3996] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Condit.
2SC3996 : ·High Switching Speed ·High Breakdown Voltage : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 35 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3996 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon .
2SC3997 : Ordering number:ENN2771 NPN Triple Diffused Planar Silicon Transistor 2SC3997 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3997] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg T.
2SC3997 : ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3997 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon.
2SC3998 : Ordering number : EN2732A 2SC3998 SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions .