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2SC3995

Part Number	2SC3995
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 23, 2016
Detailed Description	isc Silicon NPN Power Transistor 2SC3995 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(...
Datasheet	2SC3995 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3995 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3995 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation ...

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