Part Number
|
2SD157 |
Manufacturer
|
INCHANGE |
Description
|
NPN Transistor |
Published
|
Sep 29, 2020 |
Datasheet
|
2SD157
|
Features
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD157
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 50mA ·Wide Area of Safe Operation ·Minimum ...
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