| Part Number | 2SD817 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·Wide area of safe operation ·With TO-3 Package ·Minimum Lot-to-Lot... |
| Features |
n Voltage
IE= 1mA; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.2A; IB= 0.3A
MIN MAX UNIT
6
V
600
V
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.2A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
IEBO
E...
|
| File Size | 175.56KB |
| Datasheet |
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2SD811 : SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD81 HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES • High Voltage : VCBO=900V • High Peak Current Capability : Ic(Peak) = 10A • High Speed Switching : tf=0.5ys (Max.) Unit in mm 025OMAX. X- + 009 010-003 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Base Voltage Collector Current (DC) Peak Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Tempeature Range SYMBOL VCBO VCEO v EBO ic -"x peak PC T J T sts ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Vol.
2SD811 : ·High Breakdown Voltage- : VCBO= 900V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 10 A 50 W 150 ℃ -55-150 ℃ isc website：www.iscsemi.co.
2SD812 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB747 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·Suitable for 15~20W home stereo output amplifier and voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICp Peak Collector Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temper.
2SD813 : .
2SD814 : Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 0.95 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 1.45 1.1 –0.1 +0.2 Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V.
2SD814A : Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 0.95 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 1.45 1.1 –0.1 +0.2 Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V.
2SD817 : ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 6 1.5 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARAC.
2SD818 : 2SD818 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBO =1500V • Low Saturation Voltage : VCE ( sat )=4V (Typ.) • High speed : t f =0.5ys (Typ.) • Glass Passivated Collector-Base Junction. Unit in mm JZf25.0MAX. ^21.0MAX. 3 +0.09 01.0—0.03 30.2 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IE PC T i T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Cu.
2SD818 : ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscs.
2SD819 : SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS FEATURES • High Voltage . Low Saturation Voltage High Speed V C BO=1500V V CE(sat)=4V (Typ.) (I C =3A, I B =0.8A) tf =1.0ys (Max.) (I CP =3A, I B i(end)=0-8A) Glass Passivated Collector-Base Junction. Unit in mm ;ZS25.0MAX X* GfeLOMAX. ^^"CO 1— TT+H + 0.09 04.ti— 0.03 1 j |i1! 1 l CO T 30.2 ±0.2 16.9±0.2 to d MAXIMUM RATINGS (Ta=25°c) CHARACTERISTICS Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL vCBO v CEO VEBO ic IE PC T J Tstg ELECTRICAL CHARAC.
2SD819 : ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscs.