2SJ527L

2SJ527 : High speed power switching REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.3 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.3.00 Sep 07, 2005 page 1 of 8 2SJ527(L), 2SJ527(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tem.

2SJ527 : 2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –5 –20 –5 –5 2.1 20 15.

2SJ527L : 2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –5 –20 –5 –5 2.1 20 15.

2SJ527S : 2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –5 –20 –5 –5 2.1 20 15.

2SJ527S : High speed power switching REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.3 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.3.00 Sep 07, 2005 page 1 of 8 2SJ527(L), 2SJ527(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tem.