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2SJ527S

Hitachi Semiconductor
Part Number 2SJ527S
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Feature...
Datasheet PDF File 2SJ527S PDF File

2SJ527S
2SJ527S

Overview
2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
3 Ω typ.
• Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –5 –20 –5 –5 2.
1 20 15...


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