IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
250 V 20 mW 64 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package Marking
PG-TO263-3 200N25N
PG-TO220-3 200N25N
PG-TO262-3 200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Va...