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IPP200N25N3G

Infineon Technologies
Part Number IPP200N25N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jul 2, 2014
Detailed Description IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent g...
Datasheet PDF File IPP200N25N3G PDF File

IPP200N25N3G
IPP200N25N3G


Overview
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID 250 20 64 V mW A • Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package Marking PG-TO263-3 200N25N PG-TO220-3 200N25N PG-TO262-3 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 64 46 256 320 10 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=47 A, R GS=25 W mJ kV/µs V W °C T C=25 °C 300 -55 .
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.
175 55/175/56 J-STD20 and JESD22 See figure 3 Rev.
2.
4 page 1 2011-07-14 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.
5 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 µA V DS=200 V, V GS=0 V, T j=25 °C V DS=200 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=64 A V GS=20 V, V DS=0 V V GS=10 V, I D=64 A 250 2 3 0.
1 4 1 µA V 61 10 1 17.
5 2.
4 122 100 100 20 nA mW W S 3) D...


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