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IPW60R099C7

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099C7 IIPW60R099C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL...

INCHANGE

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