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IPW60R099CPA

Infineon
Part Number IPW60R099CPA
Manufacturer Infineon
Description Power Transistor
Published Mar 24, 2017
Detailed Description CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • Hi...
Datasheet PDF File IPW60R099CPA PDF File

IPW60R099CPA
IPW60R099CPA


Overview
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Product Summary V DS R DS(on),max Q g,typ IPW60R099CPA 600 V 0.
105 Ω 60 nC PG-TO247-3 Type IPW60R099CPA Package PG-TO247-3 Marking 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive t 1),2) AR Avalanche current, repetitive t 1),2) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS I D=11 A, V DD=50 V I D=11 A, V DD=50 V V DS=0.
.
.
480 V static Power dissipation P tot T C=25 °C Operating temperature Tj Storage temperature T stg Mounting torque M3 and M3.
5 screws Rev.
2.
0 page 1 Value 31 19 93 800 1.
2 11 50 ±20 255 -40 .
.
.
150 -40 .
.
.
150 60 Unit A mJ A V/ns V W °C Ncm 2010-02-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPW60R099CPA Value 18 93 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wavesoldering only allowed at leads T sold 1.
6 mm (0.
063 in.
) from case for 10 s min.
Values typ.
Unit max.
- - 0.
5 K/W - - 62 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=1.
2 mA 2.
5 3 3.
5 Zero gate voltage drain current I DSS V DS=60...


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