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IPW60R280P6

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R280P6 IIPW60R280P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE V...

INCHANGE

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