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IPW60R280P6

INCHANGE
Part Number IPW60R280P6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R280P6 IIPW60R280P6 ·FEATURES ·Static drain-source on-resi...
Datasheet PDF File IPW60R280P6 PDF File

IPW60R280P6
IPW60R280P6

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R280P6 IIPW60R280P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.
8 IDM Drain Current-Single Pulsed 39 PD Total Dissipation @TC=25℃ 104 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
2 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R280P6 IIPW60R280P6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...


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