IRF60B217

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF60B217，IIRF60B217 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·...