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IRF60B217

INCHANGE
Part Number IRF60B217
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF60B217，IIRF60B217 ·FEATURES ·Static drain-source on-resistan...
Datasheet PDF File IRF60B217 PDF File

IRF60B217
IRF60B217

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF60B217，IIRF60B217 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.
0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 225 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
8 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF60B217，IIRF60B217 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID = 50μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=36A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VDS=40V; VGS= 0V VSD Diode forward voltage IS =36A, VGS = 0 V MIN TYP MAX UNIT 60 V 2.
1 3.
7 V 9.
0 mΩ ±0.
1 μA 1.
0 μA 1.
2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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