isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TJ9A10M3，ITJ9A10M3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.
17Ω.
(VGS = -10 V) ·Enhancement mode:
Vth = -2.
0 to -4.
0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-9
IDM
Drain Current-Single Pulsed
-18
PD
Total Dissipation @TC=25℃
19
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·T...