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TJ9A10M3

Toshiba Semiconductor
Part Number TJ9A10M3
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 11, 2014
Detailed Description TJ9A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ9A10M3 1. Applications • Switching Voltage Regulators Low drain-sourc...
Datasheet PDF File TJ9A10M3 PDF File

TJ9A10M3
TJ9A10M3

Overview
TJ9A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ9A10M3 1.
Applications • Switching Voltage Regulators Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.
) (VGS = -10 V) 2.
Features (1) (2) (3) Enhancement mode: Vth = -2.
0 to -4.
0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating -100 ±20 -9 -18 19 25 -9 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to...


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