iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK10A80W,ITK10A80W
·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
46Ω (typ.
) ·Enhancement mode: Vth = 3.
0 to 4.
0V (VDS = 10 V, ID=0.
45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
9.
5
IDM
Drain Current-Single Pulsed
38
PD
Total Dissipation @TC=25℃
40
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHA...