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TK10A80E

Part Number	TK10A80E
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 4, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10A80E，ITK10A80E ·FEATURES ·Low drain-source on-resistance: R...
Datasheet	TK10A80E PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10A80E，ITK10A80E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.
0Ω.
·Enhancement mode: Vth = 2.
5 to4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 50 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTI...

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