iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK17A65W，ITK17A65W
·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
2Ω ·Enhancement mode: Vth = 2.
5 to 3.
5V (VDS = 10 V, ID=0.
9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
17.
3
IDM
Drain Current-Single Pulsed
69.
2
PD
Total Dissipation @TC=25℃
45
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTER...