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TK17A65U

INCHANGE
Part Number TK17A65U
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK17A65U，ITK17A65U ·FEATURES ·Low drain-source on-resistance: RD...
Datasheet PDF File TK17A65U PDF File

TK17A65U
TK17A65U

Overview
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK17A65U，ITK17A65U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
20Ω (typ.
) ·Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.
0 to 5.
0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 13.
7 IDM Drain Current-Single Pulsed 34 PD Total Dissipation @TC=25℃ 45 Tj Max.
Operating Junction Temperature 150 Tstg Storage ...


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