isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK25A60X,ITK25A60X
·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
105Ω (typ.
) ·High-speed switching properties with lower capacitance.
·Enhancement mode: Vth = 2.
5 to 3.
5V (VDS = 10 V, ID=1.
2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
25
IDM
Drain Current-Single Pulsed
100
PD
Total Dissipation @TC=25℃
45
Tj
Max.
Operating Junction Temperature
150
Tstg
Stor...